JPH058584B2 - - Google Patents
Info
- Publication number
- JPH058584B2 JPH058584B2 JP57216821A JP21682182A JPH058584B2 JP H058584 B2 JPH058584 B2 JP H058584B2 JP 57216821 A JP57216821 A JP 57216821A JP 21682182 A JP21682182 A JP 21682182A JP H058584 B2 JPH058584 B2 JP H058584B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- voltage
- channel
- circuit
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57216821A JPS59107560A (ja) | 1982-12-13 | 1982-12-13 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57216821A JPS59107560A (ja) | 1982-12-13 | 1982-12-13 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59107560A JPS59107560A (ja) | 1984-06-21 |
| JPH058584B2 true JPH058584B2 (en]) | 1993-02-02 |
Family
ID=16694414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57216821A Granted JPS59107560A (ja) | 1982-12-13 | 1982-12-13 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59107560A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2869791B2 (ja) * | 1988-08-31 | 1999-03-10 | 株式会社日立製作所 | 半導体集積回路装置およびそれを応用した電子装置 |
| JPH02196469A (ja) * | 1989-01-25 | 1990-08-03 | Fujitsu Ltd | 半導体装置 |
| DE69532553T2 (de) | 1994-11-30 | 2004-12-23 | Sharp K.K. | Entwicklungsgerät |
| JP3068513B2 (ja) * | 1997-07-04 | 2000-07-24 | 日本電気株式会社 | 半導体装置、その製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423340A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Mis semiconductor integrated circuit |
| JPS5539412A (en) * | 1978-09-13 | 1980-03-19 | Hitachi Ltd | Insulating gate field effect transistor integrated circuit and its manufacture |
| JPS5673468A (en) * | 1979-11-21 | 1981-06-18 | Toshiba Corp | Mos type semiconductor device |
| JPS5693360A (en) * | 1979-12-26 | 1981-07-28 | Mitsubishi Electric Corp | Semiconductor device |
| JPS56115570A (en) * | 1980-02-18 | 1981-09-10 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS56146275A (en) * | 1980-02-29 | 1981-11-13 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Insulating gate type field-effect transistor |
| JPS56146276A (en) * | 1980-02-29 | 1981-11-13 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Insulating gate type field-effect transistor |
| JPS5710822A (en) * | 1980-06-23 | 1982-01-20 | Toshiba Corp | Integrated circuit device |
| JPS5741721A (en) * | 1980-08-26 | 1982-03-09 | Seiko Instr & Electronics Ltd | Constant voltage power circuit |
| JPS57126161A (en) * | 1981-01-28 | 1982-08-05 | Nec Corp | Integrated circuit device |
-
1982
- 1982-12-13 JP JP57216821A patent/JPS59107560A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59107560A (ja) | 1984-06-21 |
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